BAW resonator bi-layer top electrode with zero etch undercut
US7600303B1 · kind B1 · utility
2Cited by
14References
15Claims
0Family size
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Key dates
| Filing date | May 25, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Oct 12, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.