Method of fabricating an epitaxially grown layer
US7601217B2 · kind B2 · utility
13Cited by
49References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Feb 24, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.