Plasma processing apparatus and plasma processing method
US7601241B2 · kind B2 · utility
7Cited by
3References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 24, 2004 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Mar 28, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.