Methods of sputtering a protective coating on a semiconductor substrate
US7601246B2 · kind B2 · utility
49Cited by
15References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2004 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Dec 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.