Method of manufacturing EUVL alternating phase-shift mask
US7601467B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 6, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/30
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.