Methods for fabricating device features having small dimensions
US7601645B2 · kind B2 · utility
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4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | May 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the isotropically-etched patterned first mask layer is exposed. The isotropically-etched patterned first mask layer is removed and the subject material layer is etched to form a feature therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.