Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
US7602042B2 · kind B2 · utility
17Cited by
11References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Nov 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.