Plasma processing apparatus
US7604709B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 20, 2002 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Sep 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32192
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.