Photoresist stripping chamber and methods of etching photoresist on substrates
US7605063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Oct 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.