Process for producing sublithographic structures

US7605090B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Harald Seidl · Brandenburg an der Havel, DE

Key dates

• Filing date: Feb 23, 2006
• Grant date: Oct 20, 2009
• Expiry date: Dec 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30604
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A layer structure and process for providing sublithographic structures are provided. A first auxiliary layer is formed over a surface of a carrier layer. A lithographically patterned second auxiliary layer structure is formed on a surface of the first auxiliary layer. The first auxiliary layer is anisotropically etched using the patterned second auxiliary layer structure as mask to form an anisotropically patterned first auxiliary layer structure. The anisotropically patterned first auxiliary layer structure is isotropically etched back using the patterned second auxiliary layer structure to remove subsections below the second auxiliary layer structure and to form an isotropically patterned first auxiliary layer structure. A mask layer is formed over the carrier layer including the subsections beneath the second auxiliary layer structure and is anisotropically etched down to the carrier layer to form the sublithographic structures. The first and second auxiliary layer structures are removed to uncover the sublithographic structures.