Distributed high voltage JFET

US7605412B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Philip L. Hower · Concord, US
• David A. Walch · Bedford, US
• John Lin
• Steven L. Merchant · Amherst, US

Key dates

• Filing date: Sep 22, 2006
• Grant date: Oct 20, 2009
• Expiry date: May 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343

Abstract

A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.