Antireflective hard mask compositions
US7605439B2 · kind B2 · utility
6Cited by
38References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jun 13, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.