Methods and devices to reduce defects in dielectric stack structures
US7608300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2003 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Jan 5, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step and reactants of a subsequent CVD step, is reduced by exposing a freshly-deposited dielectric layer to a plasma before any additional layers are deposited. Incidence of a second defect type attributable to the presence of incompletely vaporized CVD liquid precursor material, is reduced by exposing the freshly-deposited dielectric layer to a plasma, and/or by continuing the flow of carrier gas through an injection valve for a period beyond the conclusion of the CVD step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.