Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress

US7608501B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Kai Frohberg · Meißen, DE
• Carsten Peters · Dresden, DE
• Matthias Schaller · Dresden, DE
• Heike Salz · Radebeul, DE

Key dates

• Filing date: Jun 22, 2006
• Grant date: Oct 27, 2009
• Expiry date: May 30, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/97

Abstract

By partially removing an etch stop layer prior to the formation of a first contact etch stop layer, a superior stress transfer mechanism may be provided in an integration scheme for generating strain by means of contact etch stop layers. Thus, a semiconductor device having different types of transistors may be provided, in which a high degree of metal silicide integrity as well as a highly efficient stress transfer mechanism is achieved.