Method of and system for forming SiC crystals having spatially uniform doping impurities
US7608524B2 · kind B2 · utility
12Cited by
9References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 17, 2006 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Mar 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/108
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.