Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7611580B2 · kind B2 · utility
2Cited by
27References
20Claims
0Family size
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Inventor
Key dates
| Filing date | May 25, 2007 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | May 25, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
System for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.