Methods of manufacturing light emitting diodes including barrier layers/sublayers

US7611915B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• David B. Slater, Jr. · Durham, US
• Bradley E. Williams · Worthington, US
• Peter Scott Andrews · Durham, US
• John Edmond · Durham, US
• Scott Allen · Apex, US

Key dates

• Filing date: Mar 20, 2007
• Grant date: Nov 3, 2009
• Expiry date: Apr 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.