High performance transistors with hybrid crystal orientations

US7611937B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chung-Te Lin · Tainan, TW
• I-Lu Wu · Baoshan, TW
• Mariam Sadaka · Austin, US

Key dates

• Filing date: Nov 17, 2005
• Grant date: Nov 3, 2009
• Expiry date: Jan 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01

Abstract

A method of forming a semiconductor structure having a hybrid crystal orientation and forming MOSFETs having improved performance on the semiconductor structure is provided. The method includes providing a substrate comprising a buried oxide (BOX) on a first semiconductor layer, and a second semiconductor layer on the BOX, wherein the first and second semiconductor layers have a first and a second crystal orientation, respectively, and wherein the substrate comprises a first region and a second region. An isolation structure is formed in the second region extending to the first semiconductor layer. A trench is then formed in the isolation structure, exposing the first semiconductor layer. A semiconductor material is epitaxially grown in the trench. The method further includes forming a MOSFET of a first type on the second semiconductor layer and a MOSFET of an opposite type than the first type on the epitaxially grown semiconductor material.