MOS transistor device

US7612408B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Rudolf Zelsacher · Klagenfurt, AT
• Hermann Peri · Wernberg, AT
• Dietmar Kotz · Moosburg, AT

Key dates

• Filing date: Nov 24, 2004
• Grant date: Nov 3, 2009
• Expiry date: Mar 7, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

The invention relates to a MOS transistor device of the trench type, in which, in a semiconductor region of a first conductivity type, within a deep gate trench extending in the vertical direction of the semiconductor region, a vertical gate electrode and a gate oxide with a field plate step insulating the latter are formed and, in an adjoining mesa region outside and laterally with respect to the deep trench, at the upper section thereof, a source electrode region of the first conductivity type and a body region of a second conductivity type with one or a plurality of assigned body contact are formed, a drain electrode region of the first conductivity type lying opposite the deep trench in the vertical direction. The MOS transistor has a deep body reinforcement of the second conductivity type below the body region at the location of the body contact, said body reinforcement lying deeper than the field plate step.