Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor

US7612430B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Franosch · Munich, DE
• Thomas Meister · Taufkirchen, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE
• Reinhard Stengl · Stadtbergen, DE
• Konrad Wolf · Walzbachtal, DE

Key dates

• Filing date: Jun 15, 2001
• Grant date: Nov 3, 2009
• Expiry date: Jun 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer (106).