Operation sequence and commands for measuring threshold voltage distribution in memory
US7613045B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 26, 2007 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Mar 2, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device generates one or more read reference voltages rather than being explicitly supplied with each read reference voltage from an external host controller. The technique involves providing a command to the memory device that causes a reading of a set of storage elements by the memory device using a reference voltage which is different than a reference voltage used in a previous reading, where the new read reference value is not explicitly set outside the memory device. In one implementation, the memory device is provided with an initial reference voltage and a step size for generating additional reference voltages. The technique can be used, e.g., in determining a threshold voltage distribution of a set of storage elements. In this case, a voltage sweep can be applied to a word line associated with the set of storage elements, and data obtained based on the number of conductive storage elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.