Method of reducing stress-induced mechanical problems in optical components
US7614253B2 · kind B2 · utility
4Cited by
12References
6Claims
0Family size
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Key dates
| Filing date | Nov 17, 2006 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Aug 1, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.