Damascene process for carbon memory element with MIIM diode
US7615439B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Sep 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
Abstract
Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.