Method for oxidizing a layer, and associated holding devices for a substrate

US7615499B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hin Yiu Anthony Chung · Blaustein, DE
• Thomas Gutt · Taufkirchen, DE

Key dates

• Filing date: Jul 26, 2003
• Grant date: Nov 10, 2009
• Expiry date: Jun 7, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/94
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.