Integrated circuit having an insulated memory

US7615770B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jan Boris Philipp · Peekskill, US
• Thomas Happ · Tarrytown, US
• Renate Bergmann · Hersbruck, DE

Key dates

• Filing date: Oct 27, 2005
• Grant date: Nov 10, 2009
• Expiry date: Jan 7, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material defines a narrow region. The memory cell includes first insulation material having a first thermal conductivity and contacting the phase-change material. A maximum thickness of the first insulation material contacts the narrow region. The memory cell includes a second insulation material having a second thermal conductivity greater than the first thermal conductivity and contacting the first insulation material.