Elevated source and drain elements for strained-channel heterojuntion field-effect transistors

US7615829B2 · kind B2 · utility

Assignee

• AMBERWAVE SYSTEMS CORPORATION · US

Inventors

• Anthony J. Lochtefeld · Ipswich, US
• Thomas A. Langdo · Framingham, US
• Richard Westhoff · Hudson, US

Key dates

• Filing date: Jun 7, 2002
• Grant date: Nov 10, 2009
• Expiry date: Aug 13, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/801

Abstract

A semiconductor structure having a surface layer disposed over a substrate, the surface layer including strained silicon. A contact layer is disposed over a portion of the surface layer, the contact layer including a metal-semiconductor alloy. A bottommost boundary of the contact layer is disposed above a bottommost boundary of the surface layer.