Contact surrounded by passivation and polymide and method therefor
US7615866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2006 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Aug 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has contact between the last interconnect layer and the bond pad that includes a barrier metal between the bond pad and the last interconnect layer. Both a passivation layer and a polyimide layer separate the last interconnect layer and the bond pad. The passivation layer is patterned to form a first opening to contact the last interconnect layer. The polyimide layer is also patterned to leave a second opening that is inside and thus smaller than the first opening through the passivation. The barrier layer is then deposited in contact with the last interconnect layer and bounded by the polyimide layer. The bond pad is then formed in contact with the barrier, and a wire bond is then made to the bond pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.