Capacitor and method for fabricating the same
US7616426B2 · kind B2 · utility
5Cited by
4References
32Claims
0Family size
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Key dates
| Filing date | Nov 10, 2006 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Jul 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.