Method for selecting and optimizing exposure tool using an individual mask error model
US7617477B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2006 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Nov 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods are disclosed for selecting and optimizing an exposure tool using an individual mask error model. In one embodiment, a method includes selecting a model of a lithography process including an optical model of an exposure tool and a resist model, creating an individual mask error model representing a mask manufactured using mask layout data, simulating the lithography process using the model of the lithography process and the individual mask error model to produce simulated patterns, determining differences between the simulated patterns and a design target, and optimizing settings of the exposure tool based on the differences between the simulated patterns and the design target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.