Target of high-purity nickel or nickel alloy and its producing method
US7618505B2 · kind B2 · utility
6Cited by
9References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Mar 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/183
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.