Semiconductor device and method of forming shielding along a profile disposed in peripheral region around the device
US7618846B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2008 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Jun 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor die with a peripheral region around the die. A first insulating material is deposited in the peripheral region. A conductive via is formed through the first insulating material. A conductive layer is formed over the semiconductor die. The conductive layer is electrically connected between the conductive via and a contact pad of the semiconductor die. A second insulating layer is deposited over the first insulating layer, conductive layer, and semiconductor die. A profile is formed in the first and second insulating layers in the peripheral region. The profile is tapered, V-shaped, truncated V-shape, flat, or vertical. A shielding layer is formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference. The shielding layer conforms to the profile in the peripheral region and electrically connects the shielding layer to the conductive via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.