Method for forming self-aligned metal silicide contacts
US7618891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2006 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Feb 2, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.