Current sense trench type MOSFET with improved accuracy and ESD withstand capability
US7619280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2005 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Oct 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an active area. The trench positions in the transition region are eliminated or are deactivated, as by shorting to the MOSFET source of the trench, or by removing the source regions in areas of the transition region. By inactivating MOSgate action in the transition region surrounding the source, the device is made less sensitive to current ratio variation due to varying manufacturing tolerances. The gate to source capacitance is increased by surrounding the active area with an enlarged P+ field region which is at least five times the area of the active region, thereby to make the device less sensitive to ESD failure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.