Patent · US Active

Semiconductor interconnect and method of making same

US7619310B2 · kind B2 · utility

6Cited by

8References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Frank Huebinger · Poughkeepsie, US
Moosung Chae · Poughkeepsie, US
Armin Tilke · Beacon, US
Hermann Wendt · Grasbrunn, DE

Key dates

Filing date	Nov 3, 2006
Grant date	Nov 17, 2009
Priority date	—
Expiry date	Jan 15, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of the conductive line, and an interlevel dielectric surrounding the conductive line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.