Patent · US Active

EPI T-gate structure for CoSi2 extendibility

US7622339B2 · kind B2 · utility

1Cited by

10References

20Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Mark D. Hall · Austin, US
Dharmesh Jawarani · Round Rock, US
Mehul D. Shroff · Austin, US
Edward O. Travis · Austin, US

Key dates

Filing date	Jan 26, 2006
Grant date	Nov 24, 2009
Priority date	—
Expiry date	Mar 10, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0227
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor process and apparatus provide a T-shaped structure (96) formed from a polysilicon structure (10) and an epitaxially grown polysilicon layer (70) and having a narrower bottom critical dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi2) in at least the upper region (90) of the T-shaped structure (96) without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.