Memory device having implanted oxide to block electron drift, and method of manufacturing the same
US7622373B2 · kind B2 · utility
5Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Dec 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7624
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory device includes a substrate, a first gate stack overlying the substrate, a second gate stack overlying the substrate and spaced apart from the first gate stack, an oxide region formed at a first depth within the substrate and between the first and second gate stacks, and an impurity doped region formed at a second depth within the substrate and between the first and second gate stacks, the first depth being lower than the second depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.