Method of forming an electrically conductive line in an integrated circuit

US7622391B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Kai Frohberg · Meißen, DE
• Thomas Werner · Radebeul, DE
• Ruo Qing Su · Dresden, DE

Key dates

• Filing date: Feb 23, 2007
• Grant date: Nov 24, 2009
• Expiry date: Oct 29, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening is formed in the layer of dielectric material. The opening is located over the electrically conductive feature and has a first lateral dimension. A cavity is formed in the electrically conductive feature. The cavity has a second lateral dimension being greater than the first lateral dimension. The cavity and the opening are filled with an electrically conductive material.