Semiconductor device and having trench interconnection
US7622808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first interconnection layer and a interlayer insulating layer. The first interconnection layer is formed on a upper side of a substrate, and includes a first interconnection. The interlayer insulating layer is formed on the first interconnection layer, and includes a via connected with the first interconnection at one end of the via and a second interconnection connected with the via at another end of the via. The interlayer insulating layer has a relative dielectric constant lower than that of a silicon oxide film. An upper portion of the interlayer insulating layer includes a silicon-oxide film, a silicon nitride film and a silicon oxide film in order from a lower portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.