Patent · US Active

Memory device having concurrent write and read cycles and method thereof

US7623404B2 · kind B2 · utility

5Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2006
Grant dateNov 24, 2009
Priority date
Expiry dateDec 12, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/412
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes a latch having an input to receive a bit value, an input to receive a clock signal, and an output to provide a latched bit value based on the clock signal. The memory device further includes a bit cell including a storage component, and a write row driver configured to enable write access to the bit cell to store the latched bit value at the storage component for a first phase and a second phase of a cycle of the clock signal, the second phase following the first phase, and a read row driver configured to disable read access to the bit cell for the first phase of the cycle of the clock signal and to enable read access to the bit cell for the second phase of the cycle of the clock signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.