Method for removing aluminum fluoride contamination from aluminum-containing surfaces of semiconductor process equipment
US7624742B1 · kind B1 · utility
4Cited by
8References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 22, 2006 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Sep 9, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described are methods of removing aluminum fluoride contaminants from aluminum, anodized aluminum, and sprayed ceramic surfaces. Hydrofluoric acid, long known to be effective at removing certain contaminants, has not been used to dissolve aluminum fluoride on aluminum-containing surfaces because the hydrofluoric acid strongly attacks such surfaces, and consequently damages sensitive components. Methods used in accordance with some embodiments remove aluminum fluoride using a mixture of hydrofluoric acid and one or more anhydrous acid. Suitable anhydrous acids include acetic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.