Multifrequency plasma reactor
US7625460B2 · kind B2 · utility
10Cited by
15References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | May 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multifrequency plasma reactor includes first, second and third power generators operably coupled to at least one of an upper and lower electrode for generating power signals. The plasma reactor further includes a controller for selectively activating the power generators according to an activation profile that results in the formation of a desirable narrow gap via in a semiconductor wafer. A method of generating a plasma in the reactor for etching the semiconductor wafer is also described by way of configuring the power generators according to various activation configurations during various phases of the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.