Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures
US7625811B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 23, 2006 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Jul 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method according to the invention enables first and second active zones to be produced on a front face of a support, which said zones are respectively formed by first and second monocrystalline semi-conducting materials that are distinct from one another and preferably have identical crystalline structures. The front faces of the first and second active zones also present the advantage of being in the same plane. Such a method consists in particular in producing the second active zones by a crystallization step of the second semi-conducting material in monocrystalline form, from patterns made of second semi-conducting material in polycrystalline and/or amorphous form and from interface regions between said patterns and preselected first active zones. Moreover, the support is formed by stacking of a substrate and of an electrically insulating thin layer, the front face of the electrically insulating thin layer forming the front face of the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.