Patent · US Active

Method for forming vias in a substrate

US7625818B2 · kind B2 · utility

27Cited by
4References
17Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 31, 2008
Grant dateDec 1, 2009
Priority date
Expiry dateJul 31, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76898
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention relates to a method for forming vias in a substrate, comprising the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a photo resist layer on the first surface of the substrate; (c) forming a pattern on the photo resist layer; (d) forming a groove and a pillar in the substrate according to the pattern, wherein the groove surrounds the pillar; (e) forming a polymer in the groove of the substrate; (f) removing the pillar of the substrate to form an accommodating space; (g) forming a conductive metal in the accommodating space; and (h) removing part of the second surface of the substrate to expose the conductive metal and the polymer. As a result, thicker polymer can be formed in the groove, and the thickness of the polymer in the groove is uniform.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.