Support structures for semiconductor devices
US7626268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2005 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Sep 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.