Method and system for measuring patterned structures
US7626710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Feb 20, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.