Method and apparatus for testing a memory device with a redundant self repair feature
US7626874B1 · kind B1 · utility
6Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2007 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Jan 20, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1208
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A test methodology for testing a memory device with a RSR feature is disclosed. For example, a method for testing a memory device having at least one memory cell group, at least one redundant memory cell group, and a defect detect register is disclosed. In one embodiment, the method applies at least one memory test to the at least one memory cell group; and applies a defect detect register test to the defect detect register.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.