Patent · US Active

Memory built-in self repair (MBISR) circuits/devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure

US7627792B2 · kind B2 · utility

16Cited by

15References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Mario Di Ronza · Birkenfeld, DE
Yannick Martelloni · Poing, DE

Key dates

Filing date	Feb 11, 2004
Grant date	Dec 1, 2009
Priority date	—
Expiry date	Oct 31, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/81
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for repairing a memory comprising a Memory Built-In Self Repair (MBISR) structure comprises the steps of detection of defective storage cells, and redundancy allocation. The redundancy allocation step is carried out in such a way that it combines a row and/or column oriented redundancy repair approach with a word oriented redundancy repair approach. A Memory Built-In Self Repair (MBISR) device comprises at least one memory (2) with row and/or column redundancy, at least one row and/or column Memory Built-In Self Repair (MBISR) circuit (3), and a word redundancy block (4). Furthermore, a distributed MBISR structure as well as dedicated Column/Row MBISR circuits (3) are provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.