Process for producing silicon single crystal
US7628854B2 · kind B2 · utility
2Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jul 14, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.