Heated gas box for PECVD applications
US7628863B2 · kind B2 · utility
13Cited by
26References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2004 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.