Plasma processing method for forming a silicon nitride film on a silicon oxide film
US7629033B2 · kind B2 · utility
6Cited by
15References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 17, 2007 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Nov 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-processing the silicon oxide film by the plasma so as to modify an upper portion of the silicon oxide film into the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.